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Calculate and plot the excess hole distribution, [tex]A_p(x)[/tex], in the base of a p-n-p transistor, assuming [tex]W/L_p = 0.5[/tex].

The calculations are simplified if the vertical scale is measured in units of [tex]A_p(0)[/tex] and the horizontal scale in units of [tex]x_n/L_e[/tex].

Answer :

The excess hole distribution Aplx in the base of a p-n-p transistor can be calculated and plotted using the given values of W./1.p and scaling factors for the vertical and horizontal scales.

To calculate and plot the excess hole distribution Aplx in the base of a p-n-p transistor, we need to consider the given value of W./1.p, which represents the width of the base region relative to the diffusion length of minority carriers. The calculations are simplified by scaling the vertical and horizontal axes.

By measuring the vertical scale in units of Ap/Ap and the horizontal scale in units of xn/Le, we can normalize the excess hole distribution and the distance across the base region, respectively. This normalization allows for easier analysis and comparison of the results.

The excess hole distribution Aplx represents the variation in the concentration of holes across the base region of the transistor. It provides insights into the behavior of carriers and their recombination processes within the device. By plotting Aplx, we can visualize the spatial distribution of holes and gain a better understanding of the transistor's performance.

To summarize, the excess hole distribution Aplx in the base of a p-n-p transistor can be calculated and plotted by considering the relative width of the base region and scaling factors for the vertical and horizontal axes. This analysis helps in studying the behavior of carriers and their recombination processes in the transistor.

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